********************************************** Geant4 version $Name: geant4-09-04-ref-00 $ (06-Apr-2001) Copyright : Geant4 Collaboration ********************************************** Detector Construction is defined HsPhysicsList: EMPhysicsList is set HsPhysicsList: HadronicPhysicsList is set Physics List is defined User actions will be initialized hTestPrimaryGeneratorMessenger: Construct hTestPrimaryGeneratorAction is defined EventAction is defined TrackingAction is defined UI interface is started #======================================================= # Macro file "mylar.mac" for the Mylar test by hTest.cc # 10.04.01 V.Ivanchenko #======================================================= /run/verbose 2 /step/verbose 0 /tracking/verbose 0 /stepping/verbose 0 /event/verbose 0 /hTest/verbose 0 # /hTest/physics/cutGamma 0.01 mm /hTest/physics/cutElectron 0.001 mm /hTest/physics/MaxStep 1.0 mm hTestPhysicsList: MaxChargedStep = 1 mm /hTest/physics/EMList LowEnergy /hTest/physics/HadronList LowEnergy HsPhysicsList: HadronicPhysicsList is set /hTest/AbsorberMaterial Mylar /hTest/AbsorberThick 0.001 mm /hTest/NumberOfAbsorbers 60 /hTest/WorldMaterial Vacuum /hTest/numberAbsToSave 60 /hTest/HistoName mylar.paw /hTest/NumberOfEvents 1000 # /gun/particle proton /gun/energy 2 MeV Start initialisation userDetector->Construct() start. ***** Table : Nb of materials = 18 ***** Material: Beryllium density: 1.848 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 35.267 cm ---> Element: Beryllium Z = 4.0 N = 9.0 A = 9.01 g/mole fractionMass: 100.00 % Abundance 100.00 % Material: Aluminum density: 2.700 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 8.893 cm ---> Element: Aluminum Z = 13.0 N = 27.0 A = 26.98 g/mole fractionMass: 100.00 % Abundance 100.00 % Material: Carbon density: 2.000 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 21.348 cm ---> Element: Carbon Z = 6.0 N = 12.0 A = 12.01 g/mole fractionMass: 100.00 % Abundance 100.00 % Material: Silicon density: 2.330 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 9.368 cm ---> Element: Silicon Z = 14.0 N = 28.1 A = 28.09 g/mole fractionMass: 100.00 % Abundance 100.00 % Material: liquidArgon density: 1.390 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 14.065 cm ---> Element: liquidArgon Z = 18.0 N = 40.0 A = 39.95 g/mole fractionMass: 100.00 % Abundance 100.00 % Material: Iron density: 7.870 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 1.759 cm ---> Element: Iron Z = 26.0 N = 55.9 A = 55.85 g/mole fractionMass: 100.00 % Abundance 100.00 % Material: Copper density: 8.960 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 1.436 cm ---> Element: Copper Z = 29.0 N = 63.5 A = 63.55 g/mole fractionMass: 100.00 % Abundance 100.00 % Material: Gold density: 19.320 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 3.344 mm ---> Element: Gold Z = 79.0 N = 197.0 A = 196.97 g/mole fractionMass: 100.00 % Abundance 100.00 % Material: Lead density: 11.350 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 5.612 mm ---> Element: Lead Z = 82.0 N = 207.2 A = 207.19 g/mole fractionMass: 100.00 % Abundance 100.00 % Material: Water H_2O density: 1.000 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 36.092 cm ---> Element: HydrogenH Z = 1.0 N = 1.0 A = 1.01 g/mole fractionMass: 11.21 % Abundance 66.67 % ---> Element: OxygenO Z = 8.0 N = 16.0 A = 16.00 g/mole fractionMass: 88.79 % Abundance 33.33 % Material: Methane CH_4 density: 0.667 mg/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 696.375 m ---> Element: HydrogenH Z = 1.0 N = 1.0 A = 1.01 g/mole fractionMass: 25.19 % Abundance 80.00 % ---> Element: CarbonC Z = 6.0 N = 12.0 A = 12.00 g/mole fractionMass: 74.81 % Abundance 20.00 % Material: Graphite Graphite density: 2.265 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 18.834 cm ---> Element: CarbonC Z = 6.0 N = 12.0 A = 12.00 g/mole fractionMass: 100.00 % Abundance 100.00 % Material: GaAs GaAs density: 5.318 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 2.293 cm ---> Element: GalliumGa Z = 31.0 N = 69.7 A = 69.72 g/mole fractionMass: 48.20 % Abundance 50.00 % ---> Element: ArsenicumAs Z = 33.0 N = 74.9 A = 74.92 g/mole fractionMass: 51.80 % Abundance 50.00 % Material: Ethane C_2H_6 density: 424.100 mg/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 1.076 m ---> Element: HydrogenH Z = 1.0 N = 1.0 A = 1.01 g/mole fractionMass: 20.16 % Abundance 75.00 % ---> Element: CarbonC Z = 6.0 N = 12.0 A = 12.00 g/mole fractionMass: 79.84 % Abundance 25.00 % Material: CsI CsI density: 4.530 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 1.852 cm ---> Element: CesiumCs Z = 55.0 N = 132.9 A = 132.91 g/mole fractionMass: 51.15 % Abundance 50.00 % ---> Element: IodideI Z = 53.0 N = 126.9 A = 126.90 g/mole fractionMass: 48.85 % Abundance 50.00 % Material: Air density: 1.290 mg/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 285.161 m ---> Element: NitrogenN Z = 7.0 N = 14.0 A = 14.01 g/mole fractionMass: 70.00 % Abundance 72.71 % ---> Element: OxygenO Z = 8.0 N = 16.0 A = 16.00 g/mole fractionMass: 30.00 % Abundance 27.29 % Material: Mylar density: 1.390 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 28.868 cm ---> Element: CarbonC Z = 6.0 N = 12.0 A = 12.00 g/mole fractionMass: 55.00 % Abundance 30.30 % ---> Element: HydrogenH Z = 1.0 N = 1.0 A = 1.01 g/mole fractionMass: 8.33 % Abundance 54.55 % ---> Element: OxygenO Z = 8.0 N = 16.0 A = 16.00 g/mole fractionMass: 36.67 % Abundance 15.15 % Material: Vacuum density: 0.000 mg/cm3 temperature: 2.73 K pressure: 0.00 atm RadLength: 204727576.737 pc ---> Element: Vacuum Z = 1.0 N = 1.0 A = 1.01 g/mole fractionMass: 100.00 % Abundance 100.00 % The WORLD is made of of Vacuum. The transverse size (XY) of the world is 1e+02 mm The ABSORBER is made of 60 items of 0.001 mm of Mylar. The transverse size (XY) is 1e+02 mm physicsList->Construct() start. LowEnergy Electromagnetic PhysicsList is initilized LowE EM processes for GenericIon LowE GenericIon LowE EM processes for He3 LowE He3 LowE EM processes for IonAr40 LowE IonAr40 LowE EM processes for IonC12 LowE IonC12 LowE EM processes for IonFe56 LowE IonFe56 LowE EM processes for alpha LowE alpha LowE EM processes for anti_kaon0 LowE EM processes for anti_lambda LowE EM processes for anti_neutron LowE EM processes for anti_nu_e LowE EM processes for anti_nu_mu LowE EM processes for anti_omega- LowE EM processes for anti_proton LowE anti_proton LowE EM processes for anti_sigma+ LowE EM processes for anti_sigma- LowE EM processes for anti_sigma0 LowE EM processes for anti_xi- LowE EM processes for anti_xi0 LowE EM processes for chargedgeantino LowE EM processes for deuteron LowE deuteron LowE EM processes for e+ LowE e+ LowE EM processes for e- LowE e- >>>>>>>>> New G4LowEnergyIonisation 0x892c358 LowE EM processes for eta LowE EM processes for eta_prime LowE EM processes for gamma LowE gamma LowE EM processes for geantino LowE EM processes for kaon+ LowE kaon+ LowE EM processes for kaon- LowE kaon- LowE EM processes for kaon0 LowE EM processes for kaon0L LowE EM processes for kaon0S LowE EM processes for lambda LowE EM processes for mu+ LowE mu+ MuonMinusCaptureAtRest is created LowE EM processes for mu- LowE mu- MuonMinusCaptureAtRest is created LowE EM processes for neutron LowE EM processes for nu_e LowE EM processes for nu_mu LowE EM processes for omega- LowE EM processes for pi+ LowE pi+ LowE EM processes for pi- LowE pi- LowE EM processes for pi0 LowE EM processes for proton LowE proton LowE EM processes for sigma+ LowE sigma+ LowE EM processes for sigma- LowE sigma- LowE EM processes for sigma0 LowE EM processes for triton LowE triton LowE EM processes for xi- LowE EM processes for xi0 LowEnergy Hadronic PhysicsList is initilized physicsList->setCut() start. hTestPhysicsList: Set cuts for all particles msc: Tables of transport mean free paths. New model of MSC , computes the lateral displacement of the particle , too. PhysicsTables from 1e+02 eV to 1e+02 TeV in 100 bins. *** LEion using Tcut =0.00048 *** LEion using Tcut =0.00082 *** LEion using Tcut =0.00057 *** LEion using Tcut =0.00066 *** LEion using Tcut =0.00026 *** LEion using Tcut =0.0036 *** LEion using Tcut =0.0042 *** LEion using Tcut =0.0088 *** LEion using Tcut =0.0044 *** LEion using Tcut =0.0002 *** LEion using Tcut =1e-05 *** LEion using Tcut =0.00069 *** LEion using Tcut =0.0019 *** LEion using Tcut =5.5e-05 *** LEion using Tcut =0.0013 *** LEion using Tcut =1e-05 *** LEion using Tcut =0.00034 *** LEion using Tcut =1e-05 LowEnergyIoni: Low energy ionisation code with implementation of the continuous dE/dx part. At present it can be used for electrons in the energy range [250eV,100GeV] the process must work with G4LowEnergyBremsstrahlung *** LE Bremsstrahlung using Gamma Tcut = 1e-05 for material Beryllium *** LE Bremsstrahlung using Gamma Tcut = 1e-05 for material Aluminum *** LE Bremsstrahlung using Gamma Tcut = 1e-05 for material Carbon *** LE Bremsstrahlung using Gamma Tcut = 1e-05 for material Silicon *** LE Bremsstrahlung using Gamma Tcut = 1e-05 for material liquidArgon *** LE Bremsstrahlung using Gamma Tcut = 0.0019 for material Iron *** LE Bremsstrahlung using Gamma Tcut = 0.0022 for material Copper *** LE Bremsstrahlung using Gamma Tcut = 0.0084 for material Gold *** LE Bremsstrahlung using Gamma Tcut = 0.006 for material Lead *** LE Bremsstrahlung using Gamma Tcut = 1e-05 for material Water *** LE Bremsstrahlung using Gamma Tcut = 1e-05 for material Methane *** LE Bremsstrahlung using Gamma Tcut = 1e-05 for material Graphite *** LE Bremsstrahlung using Gamma Tcut = 0.0017 for material GaAs *** LE Bremsstrahlung using Gamma Tcut = 1e-05 for material Ethane *** LE Bremsstrahlung using Gamma Tcut = 0.0022 for material CsI *** LE Bremsstrahlung using Gamma Tcut = 1e-05 for material Air *** LE Bremsstrahlung using Gamma Tcut = 1e-05 for material Mylar *** LE Bremsstrahlung using Gamma Tcut = 1e-05 for material Vacuum LowEnBrem: Total cross sections from EEDL database,Gamma energy sampled from a parametrised formula.Implementation of the continuous dE/dx part. At present it can be used for electrons in the energy range [250eV,100GeV] the process must work with G4LowEnergyIonisation annihil: Total cross section from Heilter formula (annihilation into 2 photons). gamma energies sampled according Heitler PhysicsTables from 10 keV to 10 TeV in 100 bins. msc: Tables of transport mean free paths. New model of MSC , computes the lateral displacement of the particle , too. PhysicsTables from 1e+02 eV to 1e+02 TeV in 100 bins. MuIoni: knock-on electron cross sections . Good description above the mean excitation energy. delta ray energy sampled from differential Xsection. PhysicsTables from 1 keV to 1e+03 PeV in 150 bins. MuBrems: theoretical cross section Good description up to 1000 PeV. PhysicsTables from 1 keV to 1e+03 PeV in 150 bins. MuPairProd: theoretical cross sections Good description up to 1000 PeV. PhysicsTables from 1 keV to 1e+03 PeV in 150 bins. msc: Tables of transport mean free paths. New model of MSC , computes the lateral displacement of the particle , too. PhysicsTables from 1e+02 eV to 1e+02 TeV in 100 bins. hLowEIoni: Knock-on electron cross sections . Good description above the mean excitation energy. Delta ray energy sampled from differential Xsection. PhysicsTables from 10 eV to 1e+02 TeV in 200 bins. Electronic stopping power model is ICRU_R49p from 1 keV to 2 MeV . Parametrisation model for antiprotons is ICRU_R49p from 50 keV to 2 MeV . Parametrization of the Barkas effect is switched on. Nuclear stopping power model is ICRU_R49 material min.delta energy(keV) Methane 0.043 Air 0.086 Vacuum 0.021 ============= The cut Energy ============================== gamma e- Cut in range 10 mum 1 mum Cut in energy Beryllium 10 eV 484 eV Aluminum 10 eV 820 eV Carbon 10 eV 570 eV Silicon 10 eV 656 eV liquidArgon 10 eV 259 eV Iron 1.9 keV 3.56 keV Copper 2.16 keV 4.15 keV Gold 8.35 keV 8.77 keV Lead 5.98 keV 4.44 keV Water 10 eV 202 eV Methane 10 eV 10 eV Graphite 10 eV 691 eV GaAs 1.72 keV 1.93 keV Ethane 10 eV 54.8 eV CsI 2.22 keV 1.33 keV Air 10 eV 10 eV Mylar 10 eV 339 eV Vacuum 10 eV 10 eV =================================================== Start event loop for 1000 events hTestHisto: Histograms will be saved to the file Start closing geometry. Start Run processing. Run terminated. Run Summary Number of events processed : 1000 User=1.4e+02s Real=1.4e+02s Sys=0.99s hTestHisto: End of run actions are started ======================================================== Range(mm)= 0.05319; Stragling(mm)= 0.0008314 +- 2.6e-05 ======================================================== Histograms and Ntuples are saved runManager will be deleted G4 kernel has come to Quit state. Deletion of G4 kernel class start. UserDetectorConstruction deleted. UserPhysicsList deleted. UserPrimaryGenerator deleted. G4SDManager deleted. EventManager deleted. UImanager deleted. StateManager deleted. RunManager is deleting. runManager is deleted