source: Benoit/These/These.out @ 1

\BOOKMARK [0][-]{chapter*.11}{Introduction}{}
\BOOKMARK [0][-]{chapter.1}{The ATLAS Upgrade project }{}
\BOOKMARK [1][-]{section.1.1}{The Inner detector}{chapter.1}
\BOOKMARK [1][-]{section.1.2}{The calorimeters and Muon Chambers}{chapter.1}
\BOOKMARK [1][-]{section.1.3}{THe SLHC project}{chapter.1}
\BOOKMARK [2][-]{subsection.1.3.1}{Phase 1 : The Insertable b-layer \(IBL\)}{section.1.3}
\BOOKMARK [2][-]{subsection.1.3.2}{Phase 2 : Upgrade for high luminosity}{section.1.3}
\BOOKMARK [0][-]{chapter.2}{Principles of Silicon pixel sensors }{}
\BOOKMARK [1][-]{section.2.1}{The physics of Silicon}{chapter.2}
\BOOKMARK [2][-]{subsection.2.1.1}{Semiconductors properties}{section.2.1}
\BOOKMARK [2][-]{subsection.2.1.2}{Charge transport}{section.2.1}
\BOOKMARK [2][-]{subsection.2.1.3}{The pn junction}{section.2.1}
\BOOKMARK [2][-]{subsection.2.1.4}{Magnetic field effects}{section.2.1}
\BOOKMARK [1][-]{section.2.2}{Radiation detection}{chapter.2}
\BOOKMARK [2][-]{subsection.2.2.1}{The energy deposition process}{section.2.2}
\BOOKMARK [2][-]{subsection.2.2.2}{Signal formation}{section.2.2}
\BOOKMARK [1][-]{section.2.3}{The Hybrid Planar Pixel Sensor}{chapter.2}
\BOOKMARK [1][-]{section.2.4}{Other Silicon sensors}{chapter.2}
\BOOKMARK [2][-]{subsection.2.4.1}{the 3D pixel sensor}{section.2.4}
\BOOKMARK [2][-]{subsection.2.4.2}{High Resistivity Monolithic Active Pixel Sensors \(MAPS\)}{section.2.4}
\BOOKMARK [1][-]{section.2.5}{Radiation damage in Silicon sensors}{chapter.2}
\BOOKMARK [2][-]{subsection.2.5.1}{Non-ionizing Energy Loss \(NIEL\)}{section.2.5}
\BOOKMARK [2][-]{subsection.2.5.2}{Ionizing energy loss}{section.2.5}
\BOOKMARK [0][-]{chapter.3}{TCAD Simulation models and experimental validation }{}
\BOOKMARK [1][-]{section.3.1}{Principles of TCAD simulation}{chapter.3}
\BOOKMARK [2][-]{subsection.3.1.1}{The physics models}{section.3.1}
\BOOKMARK [2][-]{subsection.3.1.2}{Boundary conditions}{section.3.1}
\BOOKMARK [2][-]{subsection.3.1.3}{Process simulation}{section.3.1}
\BOOKMARK [2][-]{subsection.3.1.4}{Device simulation}{section.3.1}
\BOOKMARK [1][-]{section.3.2}{The Multi-Guard Ring structure}{chapter.3}
\BOOKMARK [2][-]{subsection.3.2.1}{Principles of guard ring structures}{section.3.2}
\BOOKMARK [2][-]{subsection.3.2.2}{Optimization of guard ring structures for radiation hardness}{section.3.2}
\BOOKMARK [2][-]{subsection.3.2.3}{Study of guard ring structure in slim edges planar pixel sensors}{section.3.2}
\BOOKMARK [1][-]{section.3.3}{The charge amplification mechanism in highly irradiated silicon sensors}{chapter.3}
\BOOKMARK [1][-]{section.3.4}{Experimental validation}{chapter.3}
\BOOKMARK [2][-]{subsection.3.4.1}{Doping profile measurements}{section.3.4}
\BOOKMARK [2][-]{subsection.3.4.2}{Guard Ring measurements}{section.3.4}
\BOOKMARK [2][-]{subsection.3.4.3}{Current versus Bias characteristics}{section.3.4}
\BOOKMARK [2][-]{subsection.3.4.4}{Depletion Potential measurements}{section.3.4}
\BOOKMARK [2][-]{subsection.3.4.5}{Experimental evidence of the charge amplification mechanism }{section.3.4}
\BOOKMARK [0][-]{chapter.4}{From TCAD simulation and experimental data to digitization}{}
\BOOKMARK [1][-]{section.4.1}{Monte Carlo charge transport simulation}{chapter.4}
\BOOKMARK [1][-]{section.4.2}{Planar pixel sensor digitization}{chapter.4}
\BOOKMARK [2][-]{subsection.4.2.1}{Implementation in GEANT4 simulation of the FEI3 and FEI4 digitization}{section.4.2}
\BOOKMARK [1][-]{section.4.3}{Test beam validation of TCAD simulation}{chapter.4}
\BOOKMARK [2][-]{subsection.4.3.1}{Validation of the digitization model}{section.4.3}
\BOOKMARK [2][-]{subsection.4.3.2}{Edge effects}{section.4.3}
\BOOKMARK [2][-]{subsection.4.3.3}{Charge amplification}{section.4.3}
\BOOKMARK [0][-]{chapter.5}{Physics motivations}{}
\BOOKMARK [1][-]{section.5.1}{H-> \040phenomenology}{chapter.5}
\BOOKMARK [1][-]{section.5.2}{IBL Simulation}{chapter.5}
\BOOKMARK [2][-]{subsection.5.2.1}{Thinning effects}{section.5.2}
\BOOKMARK [2][-]{subsection.5.2.2}{Slim edges effects}{section.5.2}
\BOOKMARK [0][-]{chapter.6}{Perspective for future Radiation-Hard Silicon Planar Pixel sensors}{}
\BOOKMARK [1][-]{section.6.1}{3D electronics front-end read-out}{chapter.6}
\BOOKMARK [1][-]{section.6.2}{Charge amplification pixel structures}{chapter.6}
\BOOKMARK [-1][-]{part*.12}{Conclusion}{}
\BOOKMARK [-1][-]{part*.12}{Bibliography}{}
\BOOKMARK [-1][-]{part*.14}{Annexes}{}
\BOOKMARK [0][-]{appendix.A}{Doping profile measurements}{part*.14}
\BOOKMARK [0][-]{appendix.B}{Clean room experimental setup }{part*.14}
\BOOKMARK [0][-]{appendix.C}{The ALLPix Simulation Software}{part*.14}
\BOOKMARK [0][-]{appendix*.15}{Glossaire}{part*.14}