source: Benoit/These/These.toc @ 1

\select@language {french}
\contentsline {paragraph}{}{5}{section*.3}
\contentsline {paragraph}{Mots cl\'es : }{5}{section*.4}
\contentsline {paragraph}{}{7}{section*.6}
\contentsline {paragraph}{Keywords : }{7}{section*.7}
\contentsline {chapter}{Introduction}{17}{chapter*.11}
\contentsline {chapter}{\numberline {1}The ATLAS Upgrade project }{19}{chapter.1}
\contentsline {section}{\numberline {1.1}The Inner detector}{19}{section.1.1}
\contentsline {section}{\numberline {1.2}The calorimeters and Muon Chambers}{19}{section.1.2}
\contentsline {section}{\numberline {1.3}THe SLHC project}{19}{section.1.3}
\contentsline {subsection}{\numberline {1.3.1}Phase 1 : The Insertable b-layer (IBL)}{19}{subsection.1.3.1}
\contentsline {subsection}{\numberline {1.3.2}Phase 2 : Upgrade for high luminosity}{19}{subsection.1.3.2}
\contentsline {chapter}{\numberline {2}Principles of Silicon pixel sensors }{21}{chapter.2}
\contentsline {section}{\numberline {2.1}The physics of Silicon}{22}{section.2.1}
\contentsline {subsection}{\numberline {2.1.1}Semiconductors properties}{22}{subsection.2.1.1}
\contentsline {subsection}{\numberline {2.1.2}Charge transport}{24}{subsection.2.1.2}
\contentsline {subsection}{\numberline {2.1.3}The pn junction}{26}{subsection.2.1.3}
\contentsline {subsection}{\numberline {2.1.4}Magnetic field effects}{28}{subsection.2.1.4}
\contentsline {section}{\numberline {2.2}Radiation detection}{29}{section.2.2}
\contentsline {subsection}{\numberline {2.2.1}The energy deposition process}{29}{subsection.2.2.1}
\contentsline {subsection}{\numberline {2.2.2}Signal formation}{30}{subsection.2.2.2}
\contentsline {section}{\numberline {2.3}The Hybrid Planar Pixel Sensor}{31}{section.2.3}
\contentsline {section}{\numberline {2.4}Other Silicon sensors}{32}{section.2.4}
\contentsline {subsection}{\numberline {2.4.1}the 3D pixel sensor}{32}{subsection.2.4.1}
\contentsline {subsection}{\numberline {2.4.2}High Resistivity Monolithic Active Pixel Sensors (MAPS)}{33}{subsection.2.4.2}
\contentsline {section}{\numberline {2.5}Radiation damage in Silicon sensors}{34}{section.2.5}
\contentsline {subsection}{\numberline {2.5.1}Non-ionizing Energy Loss (NIEL)}{35}{subsection.2.5.1}
\contentsline {subsection}{\numberline {2.5.2}Ionizing energy loss}{41}{subsection.2.5.2}
\contentsline {chapter}{\numberline {3}TCAD Simulation models and experimental validation }{43}{chapter.3}
\contentsline {section}{\numberline {3.1}Principles of TCAD simulation}{43}{section.3.1}
\contentsline {subsection}{\numberline {3.1.1}The physics models}{43}{subsection.3.1.1}
\contentsline {subsection}{\numberline {3.1.2}Boundary conditions}{43}{subsection.3.1.2}
\contentsline {subsection}{\numberline {3.1.3}Process simulation}{43}{subsection.3.1.3}
\contentsline {subsubsection}{\numberline {3.1.3.1}Processing step of silicon diodes}{43}{subsubsection.3.1.3.1}
\contentsline {subsubsection}{\numberline {3.1.3.2}Large scale process simulation}{43}{subsubsection.3.1.3.2}
\contentsline {subsection}{\numberline {3.1.4}Device simulation}{43}{subsection.3.1.4}
\contentsline {section}{\numberline {3.2}The Multi-Guard Ring structure}{44}{section.3.2}
\contentsline {subsection}{\numberline {3.2.1}Principles of guard ring structures}{44}{subsection.3.2.1}
\contentsline {subsection}{\numberline {3.2.2}Optimization of guard ring structures for radiation hardness}{44}{subsection.3.2.2}
\contentsline {subsection}{\numberline {3.2.3}Study of guard ring structure in slim edges planar pixel sensors}{44}{subsection.3.2.3}
\contentsline {section}{\numberline {3.3}The charge amplification mechanism in highly irradiated silicon sensors}{44}{section.3.3}
\contentsline {section}{\numberline {3.4}Experimental validation}{44}{section.3.4}
\contentsline {subsection}{\numberline {3.4.1}Doping profile measurements}{44}{subsection.3.4.1}
\contentsline {subsection}{\numberline {3.4.2}Guard Ring measurements}{44}{subsection.3.4.2}
\contentsline {subsection}{\numberline {3.4.3}Current versus Bias characteristics}{44}{subsection.3.4.3}
\contentsline {subsection}{\numberline {3.4.4}Depletion Potential measurements}{44}{subsection.3.4.4}
\contentsline {subsection}{\numberline {3.4.5}Experimental evidence of the charge amplification mechanism }{44}{subsection.3.4.5}
\contentsline {chapter}{\numberline {4}From TCAD simulation and experimental data to digitization}{45}{chapter.4}
\contentsline {section}{\numberline {4.1}Monte Carlo charge transport simulation}{45}{section.4.1}
\contentsline {section}{\numberline {4.2}Planar pixel sensor digitization}{45}{section.4.2}
\contentsline {subsection}{\numberline {4.2.1}Implementation in GEANT4 simulation of the FEI3 and FEI4 digitization}{45}{subsection.4.2.1}
\contentsline {section}{\numberline {4.3}Test beam validation of TCAD simulation}{45}{section.4.3}
\contentsline {subsection}{\numberline {4.3.1}Validation of the digitization model}{45}{subsection.4.3.1}
\contentsline {subsection}{\numberline {4.3.2}Edge effects}{45}{subsection.4.3.2}
\contentsline {subsection}{\numberline {4.3.3}Charge amplification}{45}{subsection.4.3.3}
\contentsline {chapter}{\numberline {5}Physics motivations}{47}{chapter.5}
\contentsline {section}{\numberline {5.1}$H-> \tau \tau $ phenomenology}{47}{section.5.1}
\contentsline {section}{\numberline {5.2}IBL Simulation}{47}{section.5.2}
\contentsline {subsection}{\numberline {5.2.1}Thinning effects}{47}{subsection.5.2.1}
\contentsline {subsection}{\numberline {5.2.2}Slim edges effects}{47}{subsection.5.2.2}
\contentsline {chapter}{\numberline {6}Perspective for future Radiation-Hard Silicon Planar Pixel sensors}{49}{chapter.6}
\contentsline {section}{\numberline {6.1}3D electronics front-end read-out}{49}{section.6.1}
\contentsline {section}{\numberline {6.2}Charge amplification pixel structures}{49}{section.6.2}
\contentsline {part}{Conclusion}{53}{part*.12}
\contentsline {part}{Bibliography}{53}{part*.12}
\contentsline {part}{Annexes}{61}{part*.14}
\contentsline {chapter}{\numberline {A}Doping profile measurements}{61}{appendix.A}
\contentsline {chapter}{\numberline {B}Clean room experimental setup }{63}{appendix.B}
\contentsline {chapter}{\numberline {C}The ALLPix Simulation Software}{65}{appendix.C}
\contentsline {chapter}{Glossaire}{67}{appendix*.15}