source: Benoit/These/bibliography.bib @ 1

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%% http://bibdesk.sourceforge.net/


%% Created for Mathieu Benoit at 2011-03-15 15:04:25 +0100 


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@article{Wunstorf1992,
        Author = {R. Wunstorf and M. Benkert and N. Claussen and N. Croitoru and E. Fretwurst and G. Lindstrom and T. Schulz},
        Date-Added = {2011-03-15 14:59:14 +0100},
        Date-Modified = {2011-03-15 15:02:28 +0100},
        Doi = {DOI: 10.1016/0168-9002(92)90696-2},
        Issn = {0168-9002},
        Journal = {NIMA},
        Number = {1-3},
        Pages = {149 - 155},
        Title = {Results on radiation hardness of silicon detectors up to neutron fluences of 1015 n/cm2},
        Url = {http://www.sciencedirect.com/science/article/B6TJM-470F673-17G/2/ce7027b412713b3145838a395dcbc579},
        Volume = {315},
        Year = {1992},
        Bdsk-Url-1 = {http://www.sciencedirect.com/science/article/B6TJM-470F673-17G/2/ce7027b412713b3145838a395dcbc579},
        Bdsk-Url-2 = {http://dx.doi.org/10.1016/0168-9002(92)90696-2}}

@article{Aad2008,
        Author = {G. Aad and al.},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Journal = {J. Isnt.},
        Owner = {Mathieu},
        Pages = {7007},
        Timestamp = {2009.08.28},
        Title = {ATLAS Pixel Detector Electronics and Sensors},
        Volume = {3},
        Year = {2008}}

@article{Alam1998,
        Author = {Alam. and al.},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Institution = {CCSd/HAL : e-articles server (based on gBUS) [http://hal.ccsd.cnrs.fr/oai/oai.php] (France)},
        Journal = {ATLAS Tech. design report},
        Owner = {Mathieu},
        Publisher = {HAL - CCSd - CNRS},
        Timestamp = {2008.11.17},
        Title = {ATLAS pixel detector: technical design report},
        Year = {1998}}

@article{Benoit2009,
        Abstract = {Electric field magnitude and depletion in the bulk of silicon pixel
        detectors, which influence its breakdown behaviour, was studied using
        finite-element method to solve the drift-diffusion equation coupled
        to Poisson's equation in a simplified two dimensional model of the
        ATLAS pixel sensor. Based on this model, the number of guard rings
        and dead edges width were modified to investigate their influence
        on the detector's depletion at the edge and on its internal electrical
        field distribution. Finally, the 3 level model was implemented into
        the simulation to study the behaviour of such detector under different
        level of irradiation.},
        Author = {M Benoit and A Lounis and N Dinu},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Journal = {J. Inst.},
        Number = {03},
        Pages = {P03025},
        Title = {Simulation of guard ring influence on the performance of ATLAS pixel detectors for inner layer replacement},
        Volume = {4},
        Year = {2009}}

@article{Bruzzi2003,
        Author = {M. Bruzzi and M. Moll},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Journal = {CERN},
        Owner = {Mathieu},
        Timestamp = {2009.07.15},
        Title = {RD50 Status Report 2002/2003 RD50: Radiation hard semiconductor devices for very high luminosity colliders},
        Year = {2003}}

@article{Bruzzi2005,
        Author = {M. Bruzzi and M. Moll},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Journal = {CERN},
        Owner = {Mathieu},
        Timestamp = {2009.07.15},
        Title = {RD50 Status Report 2005: Radiation hard semiconductor devices for very high Luminosity colliders},
        Year = {2005}}

@article{Campabadal.2005,
        Author = {F. Campabadal. and M. Bruzzi and M. Moll},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Journal = {CERN},
        Owner = {Mathieu},
        Timestamp = {2009.07.15},
        Title = {RD50 Status Report 2004: Radiation hard semiconductor devices for very high luminosity colliders},
        Year = {2005}}

@book{Cardona2003,
        Author = {Yu Y. Peter and M. Cardona},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Owner = {Mathieu},
        Publisher = {Springer},
        Timestamp = {2007.11.19},
        Title = {Fundamentals of Semiconductors, 3rd Edition},
        Year = {2003}}

@article{Caughey1967,
        Author = {D. M. Caughey and R. E. Thomas},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Journal = {Proc. IEEE},
        Number = {12},
        Owner = {Mathieu},
        Pages = {2192-2193},
        Timestamp = {2009.07.16},
        Title = {Carrier mobilities in silicon empirically related to doping and field},
        Volume = {55},
        Year = {1967}}

@article{Coelli2007,
        Author = {Simone Coellia and the ATLAS Pixel Collaboration},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Journal = {J. Inst.},
        Owner = {Mathieu},
        Pages = {280-283},
        Timestamp = {2009.08.28},
        Title = {Mechanics and infrastructure for the ATLAS Pixel Detector},
        Volume = {172},
        Year = {2007}}

@article{Eremin1995,
        Author = {Eremin, V. and Li, Z. and Ilyashenko, I.},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Doi = {10.1016/0168-9002(95)00112-3},
        Journal = {Nucl. Instrum. Meth. A},
        Pages = {458-462},
        Slaccitation = {%%CITATION = NUIMA,A360,458;%%},
        Title = {{Trapping induced N(eff) and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors}},
        Volume = {A360},
        Year = {1995},
        Bdsk-Url-1 = {http://dx.doi.org/10.1016/0168-9002(95)00112-3}}

@article{Eremin2002,
        Author = {V. Eremin and E. Verbitskaya and Z. Li},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Doi = {DOI: 10.1016/S0168-9002(01)01642-4},
        Issn = {0168-9002},
        Journal = {Nucl. Instrum. Meth. A},
        Number = {3},
        Pages = {556 - 564},
        Title = {The origin of double peak electric field distribution in heavily irradiated silicon detectors},
        Volume = {476},
        Year = {2002},
        Bdsk-Url-1 = {http://dx.doi.org/10.1016/S0168-9002(01)01642-4}}

@article{Hurkx1992,
        Author = {G. A. M. Hurkx and D. B. M. Klaassen and M. P. G. Knuvers},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Journal = {IEEE Trans. Electron Devices},
        Owner = {Mathieu},
        Pages = {331-338},
        Timestamp = {2009.07.16},
        Title = {A new recombination model for device simulation including tunneling},
        Volume = {39},
        Year = {1992}}

@article{Li1992,
        Abstract = {Abstract  },
        Author = {Li, Zheng and Kraner, H.},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Journal = {J. Electronic Materials},
        Month = jul,
        Number = {7},
        Owner = {Mathieu},
        Pages = {701--705},
        Timestamp = {2009.02.16},
        Title = {Fast neutron radiation damage effects on high resistivity silicon junction detectors},
        Volume = {21},
        Year = {1992}}

@article{Li1992a,
        Author = {Z. Li and H. Kraner, H.},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Journal = {J. Electronic Materials},
        Owner = {Mathieu},
        Pages = {701-705},
        Timestamp = {2009.07.15},
        Title = {Fast neutron radiation damage effects on high resistivity silicon junction detectors},
        Volume = {21(7)},
        Year = {1992}}

@article{Li2000,
        Adsnote = {Provided by the SAO/NASA Astrophysics Data System},
        Adsurl = {http://adsabs.harvard.edu/abs/2000ITNS...47..729L},
        Author = {{Li}, Z. and {Huang}, W. and {Zhao}, L.~J.},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Doi = {10.1109/23.856506},
        Journal = {IEEE Trans. Nucl. Sci.},
        Month = jun,
        Owner = {Mathieu},
        Pages = {729-736},
        Timestamp = {2008.11.17},
        Title = {Study of the correlation between the cutting edge current breakdown and the simulated lateral electrical field boundary in high resistivity silicon detectors with multi-guard ring structure},
        Volume = {47},
        Year = {2000},
        Bdsk-Url-1 = {http://dx.doi.org/10.1109/23.856506}}

@article{Lindstroem2001,
        Author = {G. Lindstrom and al.},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Doi = {DOI: 10.1016/S0168-9002(01)00347-3},
        Issn = {0168-9002},
        Journal = {Nucl. Instrum. Meth. A},
        Keywords = {Silicon detectors},
        Pages = {60 - 69},
        Title = {Developments for radiation hard silicon detectors by defect engineering--results by the CERN RD48 (ROSE) Collaboration},
        Volume = {465},
        Year = {2001},
        Bdsk-Url-1 = {http://dx.doi.org/10.1016/S0168-9002(01)00347-3}}

@article{Lindstroem2001a,
        Author = {G. Lindstrom and al.},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Doi = {DOI: 10.1016/S0168-9002(01)00560-5},
        Issn = {0168-9002},
        Journal = {Nucl. Instrum. Meth. A},
        Keywords = {Silicon detectors},
        Number = {2},
        Pages = {308 - 326},
        Title = {Radiation hard silicon detectors--developments by the RD48 (ROSE) collaboration},
        Volume = {466},
        Year = {2001},
        Bdsk-Url-1 = {http://dx.doi.org/10.1016/S0168-9002(01)00560-5}}

@article{Lundstrom1983,
        Author = {M. S. Lundstrom and R. J. Schuelke},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Journal = {IEEE Trans. Electron Devices},
        Owner = {Mathieu},
        Pages = {1151-1159},
        Timestamp = {2009.07.16},
        Title = {Numerical analysis of heterostructure semiconductor devices},
        Volume = {30},
        Year = {1983}}

@article{Luukka2004,
        Author = {P. Luukka},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Journal = {Nucl. Instrum. Meth. A},
        Owner = {Mathieu},
        Pages = {152-157},
        Timestamp = {2009.07.15},
        Title = {Status of defect engineering activity of the RD50 collaboration},
        Volume = {530},
        Year = {2004}}

@book{Ma1989,
        Author = {T. P. Ma and Paul V. Dressendorfer},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Editor = {Wiley-Interscience},
        Owner = {Mathieu},
        Publisher = {Wiley-Interscience},
        Timestamp = {2009.08.28},
        Title = {Ionizing Radiation Effects in MOS Devices and Circuits},
        Year = {1989}}

@article{Menichelli1999,
        Adsnote = {Provided by the SAO/NASA Astrophysics Data System},
        Adsurl = {http://adsabs.harvard.edu/abs/1999NIMPA.426..135M},
        Author = {{Menichelli}, D. and {Bruzzi}, M. and {Li}, Z. and {Eremin}, V.},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Doi = {10.1016/S0168-9002(98)01482-X},
        Journal = {Nucl. Instrum. Meth. A},
        Month = apr,
        Pages = {135-139},
        Title = {{Modelling of observed double-junction effect}},
        Volume = {426},
        Year = {1999},
        Bdsk-Url-1 = {http://dx.doi.org/10.1016/S0168-9002(98)01482-X}}

@phdthesis{Moll1999,
        Author = {M. Moll},
        Comment = {DESY-Thesis-1999-040},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        File = {:C\:\\Users\\Mathieu\\Desktop\\dommage radiatif\\moll-thesis.pdf:PDF},
        Owner = {Mathieu},
        School = {University of Hamburg},
        Timestamp = {2008.03.12},
        Title = {Radiation Damage in Silicon Particle Detectors},
        Url = {http://mmoll.web.cern.ch/mmoll/publist/publist.htm},
        Year = {1999},
        Bdsk-Url-1 = {http://mmoll.web.cern.ch/mmoll/publist/publist.htm}}

@article{Moll2008,
        Author = {M. Moll and B. Mara},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Journal = {CERN},
        Owner = {Mathieu},
        Timestamp = {2009.07.15},
        Title = {RD50 Status Report 2007 - Radiation hard semiconductor devices for very high luminosity colliders},
        Year = {2008}}

@article{Moscatelli2002,
        Author = {Moscatelli, F. and al.},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        File = {:C\:\\Users\\Mathieu\\Desktop\\benoit\\silvaco_paper.pdf:PDF},
        Journal = {Nucl. Instrum. Meth. B},
        Keywords = {Silicon detector, Radiation modelling, Defect, Cluster},
        Month = jan,
        Number = {1-4},
        Owner = {Mathieu},
        Pages = {171--175},
        Timestamp = {2008.02.21},
        Title = {An enhanced approach to numerical modeling of heavily irradiated silicon devices},
        Volume = {186},
        Year = {2002}}

@article{Moscatelli2004,
        Abstract = {Radiation hardness is a critical design concern for present and future
        silicon detectors in high energy physics. Tracking systems at the
        CERN Large Hadron Collider (LHC) are expected to operate for ten
        years and to receive fast hadron fluences equivalent to 10/sup 15/cm/sup
        -2/ 1-MeV neutrons. Recently, low temperature operating conditions
        have been suggested as a means of suppressing the negative effects
        of radiation damage on detector charge collection properties. To
        investigate this effect, simulations have been carried out using
        the ISE-TCAD DESSIS device simulator. The so-called "three-level
        model" has been used. A comprehensive analysis of the influence of
        the V/sub 2/, C/sub i/O/sub i/ and V/sub 2/O capture cross sections
        on the effective doping concentration (N/sub eff/) as a function
        of temperature and fluence has been carried out. The capture cross
        sections have been varied in the range 10/sup -18/-10/sup -12/ cm/sup
        2/. The simulated results are compared with charge collection spectra
        obtained with 1064-nm laser pulses on devices irradiated with 23-GeV
        protons as a function of detector bias voltage. To validate the model,
        a wide range of temperature and fluence has been studied using a
        one-dimensional (1-D) simplified structure. Thousands of simulation
        results have been cross checked with the experimental data. The data
        between 190 K (the lower limit for simulations due to computational
        difficulties) and 290 K are well reproduced for all of the fluences
        considered. We conclude that the three-level model can be successfully
        used to predict irradiated detector behavior down to a temperature
        of at least 190 K.},
        Author = {Moscatelli, F. and al.},
        Booktitle = {Nuclear Science, IEEE Transactions on},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Editor = {Santocchia, A.},
        File = {:C\:\\Users\\Mathieu\\Desktop\\dommage radiatif\\Mocastelli_2004_IEEE.pdf:PDF},
        Issn = {0018-9499},
        Journal = {IEEE Trans. Nucl. Sci.},
        Keywords = {carbon compounds, cryogenics, doping profiles, high energy physics instrumentation computing, nuclear electronics, particle track visualisation, proton effects, silicon radiation detectors, vanadium, vanadium compounds, 190 to 290 K, C/sub i/O/sub i/ capture cross sections, CERN large hadron collider, CO, ISE-TCAD DESSIS device simulator, LHC, V/sub 2/, V/sub 2/ capture cross sections, V/sub 2/O, V/sub 2/O capture cross sections, comprehensive device simulation modeling, computational difficulties, cryogenic temperatures, detector bias voltage, detector charge collection properties, effective doping concentration, fast hadron fluences, heavily irradiated silicon detectors, high energy particle physics, laser pulses, low temperature operating conditions, negative effects, one-dimensional simplified structure, radiation damage, radiation hardness, three-level model, tracking systems},
        Number = {4},
        Owner = {Mathieu},
        Pages = {1759--1765},
        Timestamp = {2008.03.12},
        Title = {Comprehensive device Simulation modeling of heavily irradiated silicon detectors at cryogenic temperatures},
        Volume = {51},
        Year = {2004}}

@book{Nicollian2002,
        Author = {E. H. Nicollian and J. R. Brews},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Owner = {Mathieu},
        Publisher = {Wiley-Interscience},
        Timestamp = {2009.08.27},
        Title = {MOS Physics and Technology},
        Year = {2002}}

@article{Noschis2007,
        Adsnote = {Provided by the SAO/NASA Astrophysics Data System},
        Adsurl = {http://adsabs.harvard.edu/abs/2007NIMPA.574..420N},
        Author = {{Noschis}, E. and {Eremin}, V. and {Ruggiero}, G.},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Doi = {10.1016/j.nima.2007.01.186},
        Journal = {Nucl. Instrum. Meth. A},
        Month = may,
        Owner = {Mathieu},
        Pages = {420-424},
        Timestamp = {2008.11.17},
        Title = {Simulations of planar edgeless silicon detectors with a current terminating structure},
        Volume = {574},
        Year = {2007},
        Bdsk-Url-1 = {http://dx.doi.org/10.1016/j.nima.2007.01.186}}

@article{Petasecca2006,
        Author = {M. Petasecca and F. Moscatelli and D. Passeri and G.U. Pignatel and C. Scarpello},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Doi = {DOI: 10.1016/j.nima.2006.01.093},
        Issn = {0168-9002},
        Journal = {Nucl. Instrum. Meth. A},
        Keywords = {Silicon detectors},
        Number = {1},
        Pages = {192 - 195},
        Title = {Numerical simulation of radiation damage effects in p-type silicon detectors},
        Volume = {563},
        Year = {2006},
        Bdsk-Url-1 = {http://dx.doi.org/10.1016/j.nima.2006.01.093}}

@misc{publication_policy,
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Title = {ATLAS Publication Policy, available from the ATLAS Publication Committee web page: http://atlas.web.cern.ch/Atlas/GROUPS/GENERAL/SCINOTES/scinotes.html}}

@book{Rossi2006,
        Author = {L. Rossi and P. Fischer and T. Rohe and N. Wermes},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-15 15:04:08 +0100},
        Owner = {Mathieu},
        Publisher = {Springer},
        Timestamp = {2009.08.27},
        Title = {Pixel Detectors : From Fundamentals to Applications},
        Year = {2006}}

@article{Ruzin2000,
        Author = {A. Ruzin},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Doi = {DOI: 10.1016/S0168-9002(00)00179-0},
        Issn = {0168-9002},
        Journal = {Nucl. Instrum. Meth. A},
        Number = {1-2},
        Pages = {116 - 125},
        Title = {Recent results from the RD-48 (ROSE) Collaboration},
        Volume = {447},
        Year = {2000},
        Bdsk-Url-1 = {http://dx.doi.org/10.1016/S0168-9002(00)00179-0}}

@article{Sadrozinski2005,
        Author = {Hartmut F.-W. Sadrozinski and Abraham Seiden},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Doi = {DOI: 10.1016/j.nima.2005.01.086},
        Issn = {0168-9002},
        Journal = {Nucl. Instrum. Meth. A},
        Keywords = {Silicon tracker},
        Number = {1-2},
        Pages = {434 - 440},
        Title = {Tracking detectors for the sLHC, the LHC upgrade},
        Volume = {541},
        Year = {2005},
        Bdsk-Url-1 = {http://dx.doi.org/10.1016/j.nima.2005.01.086}}

@book{Selberherr1984,
        Author = {Siegfried Selberherr},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Editor = {Springer},
        Owner = {Mathieu},
        Pages = {293 p},
        Publisher = {Wien},
        Timestamp = {2008.11.17},
        Title = {Analysis and simulation of semiconductor devices},
        Year = {1984}}

@manual{SILVACO2008,
        Address = {4701 Patrick Henry Drive, bldg 1, Santa Clara, CA 95054},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Month = {June},
        Note = {V 5.14.0.R},
        Organization = {SILVACO International inc.},
        Owner = {Mathieu},
        Timestamp = {2008.11.17},
        Title = {ATLAS User's Manual, Device Simulation Software},
        Year = {2008}}

@article{Verbitskaya2007,
        Author = {V. Verbitskaya},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-15 15:03:47 +0100},
        Doi = {DOI: 10.1016/j.nima.2007.08.228},
        Issn = {0168-9002},
        Journal = {Nucl. Instrum. Meth. A},
        Keywords = {Silicon detectors},
        Number = {1},
        Pages = {77 - 86},
        Title = {Concept of Double Peak electric field distribution in the development of radiation hard silicon detectors},
        Volume = {583},
        Year = {2007},
        Bdsk-Url-1 = {http://dx.doi.org/10.1016/j.nima.2007.08.228}}

@phdthesis{Wustenfeld2001,
        Author = {Jens Wustenfeld},
        Date-Added = {2011-03-14 13:11:47 +0100},
        Date-Modified = {2011-03-14 13:11:47 +0100},
        Owner = {Mathieu},
        Timestamp = {2009.08.27},
        Title = {Characterisation of ionisation induced surface effects for the optimisation of silicon detectors for particle physics applications},
        Year = {2001}}

@book{knoll2010,
        Author = {Knoll, Glenn F.},
        Citeulike-Article-Id = {8979199},
        Citeulike-Linkout-0 = {http://www.amazon.ca/exec/obidos/redirect?tag=citeulike09-20\&path=ASIN/0470131489},
        Citeulike-Linkout-1 = {http://www.amazon.de/exec/obidos/redirect?tag=citeulike01-21\&path=ASIN/0470131489},
        Citeulike-Linkout-2 = {http://www.amazon.fr/exec/obidos/redirect?tag=citeulike06-21\&path=ASIN/0470131489},
        Citeulike-Linkout-3 = {http://www.amazon.jp/exec/obidos/ASIN/0470131489},
        Citeulike-Linkout-4 = {http://www.amazon.co.uk/exec/obidos/ASIN/0470131489/citeulike00-21},
        Citeulike-Linkout-5 = {http://www.amazon.com/exec/obidos/redirect?tag=citeulike07-20\&path=ASIN/0470131489},
        Citeulike-Linkout-6 = {http://www.worldcat.org/isbn/0470131489},
        Citeulike-Linkout-7 = {http://books.google.com/books?vid=ISBN0470131489},
        Citeulike-Linkout-8 = {http://www.amazon.com/gp/search?keywords=0470131489\&index=books\&linkCode=qs},
        Citeulike-Linkout-9 = {http://www.librarything.com/isbn/0470131489},
        Date-Added = {2011-03-11 11:21:47 +0100},
        Date-Modified = {2011-03-11 11:21:54 +0100},
        Day = {16},
        Edition = {4},
        Howpublished = {Hardcover},
        Isbn = {0470131489},
        Month = aug,
        Posted-At = {2011-03-11 10:21:24},
        Priority = {2},
        Publisher = {Wiley},
        Title = {Radiation Detection and Measurement},
        Url = {http://www.amazon.com/exec/obidos/redirect?tag=citeulike07-20\&path=ASIN/0470131489},
        Year = {2010},
        Bdsk-Url-1 = {http://www.amazon.com/exec/obidos/redirect?tag=citeulike07-20%5C&path=ASIN/0470131489}}

@book{lutz2007,
        Author = {Lutz, Gerhard},
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        Date-Added = {2011-03-11 10:49:57 +0100},
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        Day = {24},
        Howpublished = {Hardcover},
        Isbn = {3540648593},
        Month = may,
        Posted-At = {2011-03-11 09:49:15},
        Priority = {2},
        Publisher = {Springer},
        Title = {Semiconductor Radiation Detectors: Device Physics (Accelerator Physics)},
        Url = {http://www.worldcat.org/isbn/3540648593},
        Year = {2007},
        Bdsk-Url-1 = {http://www.worldcat.org/isbn/3540648593}}

@article{Cavalleri1971,
        Author = {G. Cavalleri },
        Date-Added = {2011-03-10 09:35:23 +0100},
        Date-Modified = {2011-03-10 10:07:49 +0100},
        Journal = {Nucl. Instr. and Meth.},
        Owner = {Administrator},
        Pages = {137-140},
        Timestamp = {2007.07.20},
        Title = {Extension of Ramo's theorem as applied to induced charge in semiconductor detectors},
        Volume = {33},
        Year = {1971}}

@article{Gatti1987,
        Adsnote = {Provided by the Smithsonian/NASA Astrophysics Data System},
        Adsurl = {http://adsabs.harvard.edu/abs/1987NIMPA.253..393G},
        Author = {{Gatti}, E. and {Longoni}, A. and {Rehak}, P. and {Sampietro}, M.},
        Date-Added = {2011-03-10 09:35:23 +0100},
        Date-Modified = {2011-03-10 09:35:23 +0100},
        Doi = {10.1016/0168-9002(87)90522-5},
        Journal = {Nuclear Instruments and Methods in Physics Research A},
        Month = jan,
        Pages = {393-399},
        Title = {{Dynamics of electrons in drift detectors}},
        Volume = {253},
        Year = {1987},
        Bdsk-Url-1 = {http://dx.doi.org/10.1016/0168-9002(87)90522-5}}

@article{Ramo1939,
        Author = {Simon Ramo},
        Date-Added = {2011-03-10 09:35:23 +0100},
        Date-Modified = {2011-03-10 09:35:23 +0100},
        Journal = {Proceedings of the I.R.E.},
        Owner = {Administrator},
        Pages = {584},
        Timestamp = {2007.07.20},
        Title = {Currents induced by Electron Motion},
        Volume = {27},
        Year = {1939}}

@article{Mazziotta2008,
        Author = {M.N. Mazziotta},
        Date-Added = {2011-02-27 18:37:27 +0100},
        Date-Modified = {2011-02-27 18:37:41 +0100},
        Doi = {DOI: 10.1016/j.nima.2007.10.043},
        Issn = {0168-9002},
        Journal = {Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment},
        Keywords = {Fano factor},
        Number = {2-3},
        Pages = {436 - 439},
        Title = {Electron-hole pair creation energy and Fano factor temperature dependence in silicon},
        Url = {http://www.sciencedirect.com/science/article/B6TJM-4R29FFR-4/2/4e64eabfcf36ab09a0118634a761b37e},
        Volume = {584},
        Year = {2008},
        Bdsk-Url-1 = {http://www.sciencedirect.com/science/article/B6TJM-4R29FFR-4/2/4e64eabfcf36ab09a0118634a761b37e},
        Bdsk-Url-2 = {http://dx.doi.org/10.1016/j.nima.2007.10.043}}

@book{Hartmann2009,
        Author = {Hartmann, Frank},
        Citeulike-Article-Id = {8878337},
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        Citeulike-Linkout-4 = {http://www.worldcat.org/oclc/150344856},
        Date-Added = {2011-02-23 17:32:14 +0100},
        Date-Modified = {2011-02-23 17:32:30 +0100},
        Isbn = {9783540250944},
        Posted-At = {2011-02-23 16:30:22},
        Priority = {2},
        Publisher = {Springer},
        Title = {Evolution of silicon sensor technology in particle physics},
        Url = {http://www.worldcat.org/isbn/9783540250944},
        Year = {2009},
        Bdsk-Url-1 = {http://www.worldcat.org/isbn/9783540250944}}