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| 1 | \chapter{TCAD Simulation models and experimental validation } |
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| 2 | texte... |
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| 3 | |
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| 4 | \section{Principles of TCAD simulation} |
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| 5 | texte... |
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| 6 | \subsection{The physics models} |
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| 7 | texte... |
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| 8 | \subsection{Boundary conditions} |
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| 9 | texte... |
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| 10 | \subsection{Process simulation} |
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| 11 | \subsubsection{Processing step of silicon diodes} |
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| 12 | \subsubsection{Large scale process simulation} |
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| 13 | texte... |
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| 14 | \subsection{Device simulation} |
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| 15 | texte... |
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| 16 | \section{The Multi-Guard Ring structure} |
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| 17 | \subsection{Principles of guard ring structures} |
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| 18 | \subsection{Optimization of guard ring structures for radiation hardness} |
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| 19 | \subsection{Study of guard ring structure in slim edges planar pixel sensors} |
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| 20 | \section{The charge amplification mechanism in highly irradiated silicon sensors} |
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| 21 | \section{Experimental validation} |
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| 22 | \subsection{Doping profile measurements} |
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| 23 | \subsection{Guard Ring measurements} |
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| 24 | \subsection{Current versus Bias characteristics} |
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| 25 | \subsection{Depletion Potential measurements} |
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| 26 | \subsection{Experimental evidence of the charge amplification mechanism } |
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